ESD-induced noise to low noise amplifier circuits in BiCMOS
نویسندگان
چکیده
منابع مشابه
An 8 – 18 GHz Wideband SiGe BiCMOS Low Noise Amplifier
In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...
متن کاملA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کاملA Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers
In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...
متن کاملLow Noise Amplifier Circuit
By Aalay Kapadia in Electrical Engineering and Electronic Engineering. The circuit topology we used for this project is a cascode LNA with inductive source. Typical parameters are maximum transducer gain, output power , low noise, circuit stability. Here a LNA is designed to obtain an optimum gain with minimum.
متن کاملA Broadband Low-Noise-Amplifier
This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Tsinghua Science and Technology
سال: 2010
ISSN: 1007-0214
DOI: 10.1016/s1007-0214(10)70059-6